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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : WST3078

Product name : Mosfet Power Transistor

Features : Surface mount package

RDSON : 50mΩ

Case : Tape/Tray/Reel

Applications : Load Switch

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WST3078 N&P-Ch MOSFET

Description

The WST3078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

The WST3078 meet the RoHS and Green Product

requirement with full function reliability approved.

Features
  • Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent Cdv/dt effect decline
  • z Green Device Available

Applications

  • High Frequency Point-of-Load Synchronous s
  • Small power switching for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • Load Switch

Absolute Maximum Ratings

WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Thermal Data
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Drain-Source Body Diode Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Drain-Source Body Diode Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell Density
P-Channel Typical Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell Density

Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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