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WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

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WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : WSP4012

Product name : Mosfet Power Transistor

Features : 100% EAS Guaranteed

Applications : Load Switch

Case : Tape/Tray/Reel

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QM4803D​ N-Ch and P-Channel MOSFET

Description

The QM4803D is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gatecharge for most of the synchronous buck
converter applications .
The QM4803D meet the RoHS and Green Product
requirement 100% EAS guaranteed with
full function reliability approved.

Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Applications

  • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • z Networking DC-DC Power System
  • z CCFL Back-light Inverter

Product Summery
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Absolute Maximum Ratings

WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

Thermal Data
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Guaranteed Avalanche Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Diode Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Guaranteed Avalanche Characteristics​
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Diode Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch
P-Channel Typical Characteristics
WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load SwitchWSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch

Product Tags:

n channel mosfet transistor

      

high current mosfet switch

      
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