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WST2078 Mosfet Power Transistor Surface Mount Type High Performance

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WST2078 Mosfet Power Transistor Surface Mount Type High Performance

Name: WST2078 Mosfet Power Transistor Surface Mount Type High Performance
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : WST2078

Product name : Mosfet Power Transistor

Features : Surface mount package

RDSON : 30mΩ

Case : Tape/Tray/Reel

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WST2078 N&P-Channel MOSFET

Description

The WST2078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

The WST2078 meet the RoHS and Green Product

requirement with full function reliability approved.

Applications

High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch

Features

Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available

Absolute Maximum Ratings

WST2078 Mosfet Power Transistor Surface Mount Type High Performance

Thermal Data

N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Body Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Body Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2

FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

N-Channel Typical Characteristics

P-Channel Typical Characteristics

Product Tags:

n channel mosfet transistor

high current mosfet switch

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