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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

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Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : MJE13003

Type : Triode Transistor

Material : Silicon

Power mosfet transistor : TO-126 Plastic-Encapsulate

Product name : semiconductor triode type

Tj : 150℃

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TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)

FEATURE

Ÿ Power Switching Applications

MARKING

MJE13003=Device code

Solid dot = Green molding compound device, if none, the normal device

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
MJE13003 TO-126 Bulk 200pcs/Bag
MJE13003-TU TO-126 Tube 60pcs/Tube


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 420 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V
Collector cut-off current ICBO VCB=600V,IE=0 100 uA
Collector cut-off current ICEO VCE=400V,IB=0 100 uA
Emitter cut-off current IEBO VEB=7V,IC=0 10 uA
DC current gain hFE(1)* VCE=10V, IC=200mA 20 30
hFE(2) VCE=10V, IC=250μA 5
Collector-emitter saturation voltage VCE(sat)1 IC=200mA,IB=40mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA 1.1 V
Transition frequency fT VCE=10V, IC=100mA,f=1MHz 5 MHz
Fall time tf IC=100mA 0.5 μs
Storage time tS* IC=100mA 2 4


TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type




Product Tags:

tip series transistors

      

high power pnp transistor

      
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