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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882S

VCBO : 40V

VCEO : 30V

VEBO : 6V

Product name : silicon semiconductor triode type

IC : 3A

Power Mosfet Transistor : TO-92 Plastic-Encapsulate

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TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN)

FEATURE

Power dissipation

MARKING

D882=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE, XXX=Code

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D882S TO-92 Bulk 1000pcs/Bag
D882S-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PD Collector Power Dissipation 625 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg St orage Temperature -55 ~+150 Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100µA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1 μA
Collector cut-off current ICEO VCE= 30V, IB=0 10 μA
Emitter cut-off current IEBO VEB= 6V, IC=0 1 μA
DC current gain hFE VCE=2V, IC= 1A 60 400
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency

fT

VCE= 5V , Ic=0.1A

f =10MHz

50

 80

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

Typical Characteristics

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated TransistorsD882S NPN Tip Power Transistors TO-92 Plastic Encapsulated TransistorsD882S NPN Tip Power Transistors TO-92 Plastic Encapsulated TransistorsD882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015




Product Tags:

tip pnp transistor

      

high power pnp transistor

      
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