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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882M

Collector-Base VoltageCollector-Base Voltage : 40v

Collector-Emitter Voltage : 30v

Emitter-Base Voltage : 6V

Power mosfet transistor : TO-252-2L Plastic-Encapsulate

Type : semiconductor triode type

Usage : Electronic Components

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TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN)

FEATURE


Power Dissipation

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃




ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency

fT

VCE= 5V, IC=0.1A

f =10MHz

90

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400


Typical Characteristics


D882M NPN Transistor Switch Emitter Base Voltage 6V High EfficiencyD882M NPN Transistor Switch Emitter Base Voltage 6V High EfficiencyD882M NPN Transistor Switch Emitter Base Voltage 6V High EfficiencyD882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.380 0.087 0.094
A1 0.000 0.100 0.000 0.004
B 0.800 1.400 0.031 0.055
b 0.710 0.810 0.028 0.032
c 0.460 0.560 0.018 0.022
c1 0.460 0.560 0.018 0.022
D 6.500 6.700 0.256 0.264
D1 5.130 5.460 0.202 0.215
E 6.000 6.200 0.236 0.244
e 2.286 TYP. 0.090 TYP.
e1 4.327 4.727 0.170 0.186
M 1.778REF. 0.070REF.
N 0.762REF. 0.018REF.
L 9.800 10.400 0.386 0.409
L1 2.9REF. 0.114REF.
L2 1.400 1.700 0.055 0.067
V 4.830 REF. 0.190 REF.
ĭ 1.100 1.300 0.043 0.0±1






Product Tags:

tip series transistors

      

high power pnp transistor

      
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